Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN x surface passivation layers on off-state drain ( I DS-off) and gate leakage currents ( I GS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I DS-off and I GS in 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiN x passivation scheme. In addition, I on/ I off of ∼10 11 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach

The 2018 GaN Power Electronics Roadmap

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here

Goulburn River experimental catchment data set

This paper describes the data set from the 6540-km2 Goulburn River experimental catchment in New South Wales, Australia. Data have been archived from this experimental catchment since its inception in September 2002. Land use in the northern half of the catchment is predominantly cropping and grazing on basalt-derived soils, with the south being cattle and sheep grazing on sandstone-derived soils; only the floodplains are cleared of trees in the south. Monitoring sites are mainly concentrated in the nested Merriwa (651 km2) and Krui (562 km2) subcatchments in the northern half of this experimental catchment with a few monitoring sites located in the south. The data set comprises soil temperature and moisture profile measurements from 26 locations; meteorological data from two automated weather stations (data from a further three stations are available from other sources) including precipitation, atmospheric pressure, air temperature and relative humidity, wind speed and direction, soil heat flux, and up- and down-welling shortand long-wave radiation; streamflow observations at five nested locations (data from a further three locations are available from other sources); a total of three surface soil moisture maps across a 40 km x 50 km region in the north from ~ 200 measurement locations during intensive field campaigns; and a high-resolution digital elevation model (DEM) of a 175-ha microcatchment in the Krui catchment. These data are available on the World Wide Web at http://www.sasmas.unimelb.edu.au.Christoph Rüdiger, Greg Hancock, Herbert M. Hemakumara, Barry Jacobs, Jetse D. Kalma, Cristina Martinez, Mark Thyer, Jeffrey P. Walker, Tony Wells, and Garry R. Willgoos

La sensibilite des ouvrages de prises dans la gestion des canaux d'irrigation. In FrenchOfftakes sensitivity in irrigation canal operation

In Renault, D. (Ed.). Modern techniques for manual operation of irrigation canals. Proceedings of the Fourth International ITIS [Information Techniques for Irrigation Systems] Network Meeting, Marrakech, Morocco, 25-27 April 199

Mobilization of resources, sensitivity and vulnerability in canal operation: diagnosis and preliminary analysis

In Renault, D. (Ed.). Modern techniques for manual operation of irrigation canals. Proceedings of the Fourth International ITIS [Information Techniques for Irrigation Systems] Network Meeting, Marrakech, Morocco, 25-27 April 199

Offtakes sensitivity in irrigation canal operation

In Renault, D. (Ed.). Modern techniques for manual operation of irrigation canals. Proceedings of the Fourth International ITIS [Information Techniques for Irrigation Systems] Network Meeting, Marrakech, Morocco, 25-27 April 199

Mobilisation des ressources, sensibilite et vulnerabilite dans la gestion des canaux: diagnostic & analyse preliminaire. In FrenchMobilization of resources, sensitivity and vulnerability in canal operation: diagnosis and preliminary analysis

In Renault, D. (Ed.). Modern techniques for manual operation of irrigation canals. Proceedings of the Fourth International ITIS [Information Techniques for Irrigation Systems] Network Meeting, Marrakech, Morocco, 25-27 April 199